a, nov ,2010 to - 220 f plastic - encapsulate diodes mbr f 10 200 ct schottky barrier rectifier features ? schottky barrier chip ? guard ring die constru ction for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc b locking voltage 200 v v r(rms) rms reverse voltage 140 v i o average rectified output current 10 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 120 a p d power d issipation 2 w r ja thermal r esistance from j unction to a mbient 50 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 electrical characteristics ( t a =25 unless otherwise specified) parameter symb ol test conditions m in typ m ax u nit reverse voltage v (br) i r = 0. 1 m a 200 v reverse c urrent i r v r = 200 v 5 a v f 1 i f = 5 a 0.84 forward voltage v f 2 * i f = 10 a 0.95 v typical t otal capacitance c tot v r = 4 v,f=1mhz 300 pf * p ulse test to - 220 f 1. anode 2. cathode 3. anode tiger electronic co.,ltd
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